Incorporation and optical activation of erbium in silicon using molecular beam epitaxy
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منابع مشابه
Segregation and trapping of erbium during silicon molecular beam epitaxy
Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...
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Er–Si–O crystalline thin film preparation on silicon substrates by using metal organic molecular beam epitaxy (MOMBE) is proposed. Tetra ethoxy silane (TEOS) and tris-2,2,6,6-tetra methyl-3,5-octane dionato erbium (Er(TMOD)3) were used as Si–O and Er– O precursors, respectively. The Er–Si–O thin film crystallizes mainly during the post-annealing process and into a novel type of erbium-silicate ...
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The optical activation, excitation, and concentration limits of erbium in crystal Si are studied. Preamorphized surface layers of Czochralski-grown (Cz) Si(lOO), containing 1.7X lOI O/cm3, were implanted with 250 keV Er at Auences in the range 8X lo”--8X lOI cm-‘. After thermal solid-phase epitaxy of the Er-doped amorphous layers at 600 “C, Er is trapped in the crystal at concentrations ranging...
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We report the optical activation of erbium coated silicon nanowires (Er-SiNWs) grown with the assist of platinum (Pt) and gold (Au), respectively. The NWs were grown on Si substrates by using a chemical vapor transport process using SiCl4 and ErCl4 as precursors. Pt as well as Au worked successfully as vapor-liquid-solid (VLS) catalysts for growing SiNWs with diameters of ~100 nm and length of ...
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تاریخ انتشار 2013